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| ZMM55C39资料 | |
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ZMM55C39 PDF Download |
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File Size : 105 KB
Manufacturer: Description:These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. |
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| 相关型号 | |
| ◆ ZNBG4000 | |
| ◆ ZMM6.2 | |
| ◆ ZMM55C8V2 | |
| ◆ ZMM55C7V5 | |
| ◆ ZMM55C3V9 | |
| ◆ ZMM55C3V6 | |
| ◆ ZMM55C39 | |
| ◆ ZMM55C36 | |
| ◆ ZMM55C33 | |
| ◆ ZMM55C30 | |
| 1PCS | 100PCS | 1K | 10K | ||
| 价 格 | |||||
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型 号：ZMM55C39 厂 家： 封 装：5000 批 号： 数 量： 说 明： |
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运 费： 所在地： 新旧程度： |
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| 联系人：张先生,柯小姐 |
| 电 话：0755-83982429-87 |
| 手 机：张先生13798370339/柯小姐13632815162 |
| QQ：394074929（IC)/346747839(电容2.3极管) |
| MSN：guoxingdz@yahoo.com.cn |
| 传 真：0755-83987093 |
| EMail：guoxingdz@yahoo.com.cn |
| 公司地址： 深圳市福田区中航路新亚洲国利大厦一楼N1B259 |
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